The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2020
Filed:
Oct. 30, 2017
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Makoto Utsumi, Matsumoto, JP;
Yasuhiko Oonishi, Matsumoto, JP;
Kenji Fukuda, Tsukuba, JP;
Shinsuke Harada, Tsukuba, JP;
Masanobu Iwaya, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;
Abstract
A silicon carbide semiconductor element includes n-type silicon carbide epitaxial layers formed on an n-type silicon carbide semiconductor substrate, plural p base layers selectively formed in surfaces of the silicon carbide epitaxial layers, a p-type silicon carbide epitaxial layer formed in the silicon carbide epitaxial layer, and a trench penetrating at least the silicon carbide epitaxial layer. The silicon carbide semiconductor element also includes, in a portion of the silicon carbide epitaxial layer, a mesa portion exposing the p base layer. The silicon carbide semiconductor element further includes, between consecutive mesa side faces of the mesa portion, a flat portion substantially parallel to the silicon carbide substrate. The remaining thickness of the exposed p base layer is larger than 0.5 μm and smaller than 1.0 μm.