The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2019
Filed:
Mar. 06, 2019
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Masanobu Iwaya, Matsumoto, JP;
Akimasa Kinoshita, Matsumoto, JP;
Shinsuke Harada, Tsukuba, JP;
Yasunori Tanaka, Tsukuba, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;
Abstract
In a first main surface of a silicon carbide semiconductor base, a trench is formed. On a first main surface side of the silicon carbide semiconductor base, an n-type silicon carbide epitaxial layer is deposited. In a surface of the n-type silicon carbide epitaxial layer, an n-type high-concentration region is provided. In the surface of the n-type silicon carbide epitaxial layer, a first p-type base region and a second p-type base region are selectively provided. The second p-type base region is formed at the bottom of the trench. A depth of the n-type high-concentration region is deeper than that of the first p-type base region and the second p-type base region. Thus, by an easy method, the electric field at a gate insulating film at the bottom of the trench is mitigated, enabling the breakdown voltage of the active region to be maintained and the ON resistance to be lowered.