The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2020
Filed:
Dec. 26, 2017
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Naoyuki Ohse, Matsumoto, JP;
Yusuke Kobayashi, Tsukuba, JP;
Shinsuke Harada, Tsukuba, JP;
Yasuhiko Oonishi, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;
Abstract
In a semiconductor device having a first p-type base region, a second p-type base region, a high-concentration n-type region selectively formed in an n-type silicon carbide epitaxial layer on an n-type silicon carbide substrate; a p-type base layer formed on the n-type silicon carbide epitaxial layer; an n-type source region and a p-type contact region selectively formed in a surface layer of the p-type base layer; and a trench formed penetrating the p-type base layer and shallower than the second p-type base region, in at least a part of the first p-type base region, a region is shallower than the second p-type base region as viewed from an element front surface side.