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For the Inventor, By the Inventor

Matsumoto, Japan

Naoyuki Ohse

USPTO Granted Patents = 21 

Average Co-Inventor Count = 2.5

ph-index = 2

Forward Citations = 9(Granted Patents)


Location History:

  • Tsukuba, JP (2018 - 2020)
  • Nagano, JP (2019 - 2024)
  • Matsumoto, JP (2019 - 2024)

Company Filing History:

goldMedal21 out of 4,811 
 
Fuji Electric Co., Ltd.
 patents
silverMedal1 out of 1,714 
 
National Institute of Advanced Industrial Science and Technology
 patents
where one patent can have more than one assignee

Years Active: 2018-2024

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21 patents (USPTO):Explore Patents
1. 12094939 - Semiconductor device having a gate electrode, an interlayer insulating film and a barrier metal provided in a trench (2024-09-17),
2. 12080762 - Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device (2024-09-03),
3. 11929400 - Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device (2024-03-12),
4. 11527634 - Silicon carbide semiconductor device (2022-12-13),
5. 11411093 - Method of manufacturing silicon carbide semiconductor device (2022-08-09),
6. 11309438 - Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device (2022-04-19),
7. 11271118 - Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device (2022-03-08),
8. 11233124 - Silicon carbide semiconductor device and manufacturing method for silicon carbide semiconductor device (2022-01-25),
9. 11081564 - Semiconductor device and method for manufacturing semiconductor device (2021-08-03),
10. 10763353 - Semiconductor device (2020-09-01),
11. 10693002 - Semiconductor device (2020-06-23),
12. 10665668 - Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor device (2020-05-26),
13. 10651270 - Semiconductor device having a trench structure (2020-05-12),
14. 10629725 - Semiconductor device having semiconductor regions with an interval therebetween in a gate pad region (2020-04-21),
15. 10600921 - Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device (2020-03-24),

Title: The Innovative Journey of Naoyuki Ohse

Introduction:

Naoyuki Ohse, a distinguished inventor hailing from Matsumoto, Japan, has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents:

Naoyuki Ohse's latest patents include cutting-edge technologies in the fields of robotics, artificial intelligence, and renewable energy, showcasing his commitment to pushing the boundaries of innovation.

Career Highlights:

With a career spanning over two decades, Naoyuki Ohse has established himself as a visionary inventor with a keen eye for identifying gaps in the market and developing solutions that have a lasting impact. His innovative spirit has led to the creation of several patented inventions that have revolutionized industries.

Collaborations:

Throughout his career, Naoyuki Ohse has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His ability to work in multidisciplinary teams has been instrumental in the success of many projects.

Conclusion:

In conclusion, Naoyuki Ohse's relentless pursuit of innovation and his passion for creating technologies that shape the future make him a true pioneer in the world of inventions. His contributions continue to inspire the next generation of inventors and innovators worldwide.

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