The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2020
Filed:
May. 30, 2018
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Yusuke Kobayashi, Tsukuba, JP;
Naoyuki Ohse, Matsumoto, JP;
Shinsuke Harada, Tsukuba, JP;
Takahito Kojima, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;
Abstract
A vertical MOSFET having a trench gate structure includes an n-type drift layer and a p-type base layer formed by epitaxial growth. In the n-type drift layer, an n-type region, an upper second p-type region, a lower second p-type region and a first p-type region are provided. The lower second p-type region is provided orthogonal to a trench, and a total mathematical area regions that are between the first p-type region and the p-type base layer and that include the n-type region is at least two times a total mathematical area of regions that are between the first p-type region and the p-type base layer and that include the upper second p-type region.