The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2024

Filed:

Dec. 30, 2021
Applicant:

Fuji Electric Co., Ltd., Kawasaki, JP;

Inventors:

Naoyuki Ohse, Nagano, JP;

Makoto Utsumi, Nagano, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/45 (2006.01); H01L 23/00 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 24/48 (2013.01); H01L 29/456 (2013.01); H01L 29/66053 (2013.01); H01L 2224/48245 (2013.01);
Abstract

A silicon carbide semiconductor device, including a semiconductor substrate containing silicon carbide, a bonding wire, and a surface electrode of an aluminum alloy containing silicon, the surface electrode being provided on a surface of the semiconductor substrate, and having a joint portion to which the bonding wire is bonded. The surface electrode has a plurality of silicon nodules formed therein, which include a number of the silicon nodules formed in the joint portion. One of the number of the silicon nodules is of a dendrite structure, and is included at an area percentage of at least 10% relative to a total area of the number of the silicon nodules in the joint portion.


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