The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2022
Filed:
Oct. 30, 2017
Applicant:
Fuji Electric Co., Ltd., Kawasaki, JP;
Inventors:
Assignee:
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 21/04 (2006.01); H01L 29/167 (2006.01); H01L 29/32 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/739 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/36 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/02378 (2013.01); H01L 21/02529 (2013.01); H01L 21/02634 (2013.01); H01L 21/046 (2013.01); H01L 29/0623 (2013.01); H01L 29/1095 (2013.01); H01L 29/167 (2013.01); H01L 29/32 (2013.01); H01L 29/36 (2013.01); H01L 29/4236 (2013.01); H01L 29/66068 (2013.01); H01L 29/66333 (2013.01); H01L 29/66666 (2013.01); H01L 29/7395 (2013.01); H01L 29/7397 (2013.01); H01L 29/7813 (2013.01); H01L 29/7827 (2013.01);
Abstract
A silicon carbide semiconductor device includes plural p-type silicon carbide epitaxial layers provided on an n-type silicon carbide substrate. In some of the p-type silicon carbide epitaxial layers, an nsource region is provided in at least a region of an upper portion. The nsource region includes a first portion that contains arsenic and a second portion that contains phosphorous.