The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 03, 2021

Filed:

Dec. 27, 2019
Applicant:

Fuji Electric Co., Ltd., Kawasaki, JP;

Inventor:

Naoyuki Ohse, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/45 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/456 (2013.01); H01L 29/0878 (2013.01); H01L 29/1608 (2013.01); H01L 29/41725 (2013.01); H01L 29/66068 (2013.01);
Abstract

A semiconductor device includes a first electrode, a silicon carbide substrate having a first surface electrically connected with the first electrode and a second surface opposite to the first surface, an ohmic junction layer disposed on the second surface, and a second electrode disposed on the ohmic junction layer. The ohmic junction layer has a first layer that is directly disposed on the second surface and includes a first silicide of titanium and a first silicide of a metal element other than titanium, and a second layer that is directly disposed on the first layer, includes a second silicide of titanium and a second silicide of the metal element, and has a lower titanium concentration than the first layer.


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