The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2020

Filed:

Sep. 04, 2018
Applicant:

Fuji Electric Co., Ltd., Kawasaki, JP;

Inventors:

Yusuke Kobayashi, Tsukuba, JP;

Naoyuki Ohse, Matsumoto, JP;

Shinsuke Harada, Tsukuba, JP;

Manabu Takei, Tsukuba, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/739 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/0615 (2013.01); H01L 29/0619 (2013.01); H01L 29/0623 (2013.01); H01L 29/0638 (2013.01); H01L 29/0661 (2013.01); H01L 29/0878 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/7397 (2013.01);
Abstract

In an n-type current diffusion region, a first p-type region underlying a bottom of a trench (gate trench) is provided. In the n-type current diffusion region, a second p-type region is provided between adjacent trenches, separated from the first p-type region and in contact with the p-type base region. In the p-type base region, near a side wall of the trench, a third p-type region is provided a predetermined distance from the side wall of the trench and is separated from the first and the second p-type regions. The third p-type region extends in a depth direction, substantially parallel to the side wall of the trench. A drain-side end of the third p-type region is in contact with the n-type current diffusion region or protrudes a predetermined depth from the interface of the p-type base region and the n-type current diffusion region toward the drain.


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