The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2024
Filed:
May. 31, 2018
Applicant:
Fuji Electric Co., Ltd., Kawasaki, JP;
Inventors:
Assignee:
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/417 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41741 (2013.01); H01L 29/0623 (2013.01); H01L 29/063 (2013.01); H01L 29/0869 (2013.01); H01L 29/0878 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/45 (2013.01); H01L 29/66068 (2013.01); H01L 29/7397 (2013.01); H01L 29/7813 (2013.01);
Abstract
At a front surface of a silicon carbide base, an n−-type drift layer, a p-type base layer, a first n+-type source region, a second n+-type source region, and a trench that penetrates the first and the second n+-type source regions and the p-type base layer and reaches the n-type region are provided. In the trench, the gate electrode is provided via a gate insulating film, an interlayer insulating film is provided in the trench on the gate electrode, and a barrier metal is provided in the trench on the interlayer insulating film.