The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2022
Filed:
Nov. 30, 2020
Fuji Electric Co., Ltd., Kawasaki, JP;
Takahito Kojima, Matsumoto, JP;
Naoyuki Ohse, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
In a method of manufacturing a silicon carbide semiconductor device that is a silicon carbide diode having a JBS structure including a mixture of a Schottky junction and a pn junction and that maintains low forward voltage through a SBD structure and enhances surge current capability, nickel silicide films are formed in an oxide film by self-alignment by causing a semiconductor substrate and a metal material film to react with one another through two sessions of heat treatment including a low-temperature heat treatment and a high-temperature heat treatment, the metal material film including sequentially a first nickel film, an aluminum film, and a second nickel film, the first nickel film being in contact with an entire area of a connecting region of a FLR and p-type regions respectively exposed in openings of the oxide film.