Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Abstract

A semiconductor device having, in a plan view, a termination region surrounding an active region. The semiconductor device includes a semiconductor substrate containing silicon carbide, a first-conductivity-type region provided in the semiconductor substrate at its first main surface, a plurality of first second-conductivity-type regions selectively formed in the semiconductor substrate at its first main surface, a plurality of silicide films respectively in ohmic contact with the first second-conductivity-type regions, a first electrode that is in contact with the silicide films to form ohmic regions, with the first second-conductivity-type regions to form non-operating regions, and with the first-conductivity-type region to form Schottky regions, a second electrode provided at a second main surface of the semiconductor substrate, and a second second-conductivity-type region provided in the termination region. The ohmic regions, the non-operating regions and the Schottky regions are formed in the active region in a striped pattern. The second second-conductivity-type region connects the ohmic regions and the non-operating regions.