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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10580870 B1

PDFFull Text
Date of Patent:
Mar. 03, 2020

Filed:

Jan. 04, 2019

Method of manufacturing silicon carbide semiconductor device

Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;

Inventors:

Makoto Utsumi, Matsumoto, JP;

Yasuhiko Oonishi, Matsumoto, JP;

Fumikazu Imai, Tsukuba, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;

Attorney:

Rabin & Berdo, P.C.

Primary Examiner:

Raj R Gupta

Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 29/872 (2006.01); H01L 29/51 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/36 (2006.01); H01L 29/167 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/0206 (2013.01); H01L 21/02236 (2013.01); H01L 21/02255 (2013.01); H01L 21/02378 (2013.01); H01L 21/02529 (2013.01); H01L 21/02634 (2013.01); H01L 21/049 (2013.01); H01L 21/0475 (2013.01); H01L 21/0495 (2013.01); H01L 29/0619 (2013.01); H01L 29/0623 (2013.01); H01L 29/1095 (2013.01); H01L 29/4236 (2013.01); H01L 29/51 (2013.01); H01L 29/6606 (2013.01); H01L 29/66068 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/872 (2013.01); H01L 21/046 (2013.01); H01L 29/0615 (2013.01); H01L 29/0638 (2013.01); H01L 29/167 (2013.01); H01L 29/36 (2013.01);
Abstract

A method of manufacturing a silicon carbide semiconductor device includes forming a first silicon carbide layer of a first conductivity type on a front surface of a silicon carbide semiconductor substrate. A thermal oxidation film is formed on a surface of a base body including the first silicon carbide layer. The thermal oxidation film is subsequently removed using a solution containing hydrofluoric acid. The base body is washed with a mixture of ammonia water and a hydrogen peroxide solution, a mixture of hydrochloric acid and a hydrogen peroxide solution, and a dilute hydrofluoric acid. The base body is held at temperature of 700 degrees C. to 1700 degrees C., and an insulating film is deposited on the base body.

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