logo

For the Inventor, By the Inventor

Tsukuba, Japan

Fumikazu Imai

This inventor holds 17 USPTO granted patents and 1 published patent application. Top assignee: Fuji Electric Co., Ltd.. Active years: 2015-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fumikazu Imai. Retrieved from https://idiyas.com/inventor/fumikazu-imai

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 17 

% Patents Active = 82.4

Average Co-Inventor Count = 1.6

ph-index = 3

Forward Citations = 19(Granted Patents)


Location History:

  • Kawasaki, JP (2015 - 2019)
  • Tsukuba, JP (2015 - 2021)

Company Filing History:

goldMedal17 out of 4,826 
 
Fuji Electric Co., Ltd.
 patents

Years Active: 2015-2021

Loading Chart...
17 patents (USPTO):Explore Patents
1. 11158503 - Silicon carbide semiconductor substrate (2021-10-26),
2. 10615031 - Silicon carbide semiconductor substrate and method of manufacturing silicon carbide semiconductor substrate (2020-04-07),
3. 10600921 - Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device (2020-03-24),
4. 10600872 - Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device (2020-03-24),
5. 10580870 - Method of manufacturing silicon carbide semiconductor device (2020-03-03),
6. 10374050 - Silicon carbide semiconductor device and manufacturing method of silicon carbide semiconductor device (2019-08-06),
7. 10103220 - Method of manufacturing semiconductor device (2018-10-16),
8. 10032894 - Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device (2018-07-24),
9. 9929232 - Semiconductor device comprises two or more regions that have a same impurity concentration and differing carrier concentrations (2018-03-27),
10. 9887270 - Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device (2018-02-06),
11. 9685333 - Manufacturing method of silicon carbide semiconductor device (2017-06-20),
12. 9401411 - SiC semiconductor device and method for manufacturing the same (2016-07-26),
13. 9269579 - Method for manufacturing silicon carbide semiconductor device (2016-02-23),
14. 9263543 - Method for manufacturing a semiconductor device (2016-02-16),
15. 9240451 - Silicon carbide semiconductor device (2016-01-19),

Title: Fumikazu Imai: Innovator in Silicon Carbide Semiconductor Technology

Introduction

Fumikazu Imai is a prominent inventor based in Tsukuba, Japan, known for his significant contributions to semiconductor technology. With a total of 17 patents to his name, Imai has made remarkable advancements in the field of silicon carbide semiconductors.

Latest Patents

Imai's latest patents focus on silicon carbide semiconductor substrates. One of his notable inventions includes a silicon carbide semiconductor substrate that features an epitaxial layer. This substrate is characterized by a difference in donor and acceptor concentrations within a specific range, ensuring that these concentrations remain unaffected by impurities during the epitaxial growth process.

Career Highlights

Throughout his career, Imai has been associated with Fuji Electric Co., Ltd., where he has played a crucial role in developing innovative semiconductor solutions. His work has significantly impacted the efficiency and performance of semiconductor devices.

Collaborations

Imai has collaborated with esteemed colleagues such as Tsunehiro Nakajima and Masanobu Iwaya, contributing to various projects that enhance semiconductor technology.

Conclusion

Fumikazu Imai's contributions to silicon carbide semiconductor technology exemplify his innovative spirit and dedication to advancing the field. His patents and collaborations continue to influence the semiconductor industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…