Silicon carbide semiconductor device

Abstract

A silicon carbide semiconductor device includes a low-concentration n-type drift layer deposited on a silicon carbide substrate to form a semiconductor substrate. A first front surface metal layer, which forms a Schottky contact with the semiconductor substrate, is formed on a front surface of the semiconductor substrate. An outer circumferential end of the first front surface metal layer extends on an interlayer insulating film which covers an edge portion. A second front surface metal layer which forms a front surface electrode is formed on the first front surface metal layer. When a portion of the second front surface metal layer is formed by dry etching, the entire first front surface metal layer, which will be Schottky contact metal, is covered with the second front surface metal layer. Thus, generation of an etching residue is prevented and a device with a front surface electrode structure with high reliability is provided.