The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2021
Filed:
Mar. 18, 2020
Applicant:
Fuji Electric Co., Ltd., Kawasaki, JP;
Inventor:
Fumikazu Imai, Tsukuba, JP;
Assignee:
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/10 (2006.01); C30B 25/16 (2006.01); C30B 25/20 (2006.01); C30B 29/36 (2006.01); H01L 21/02 (2006.01); H01L 29/36 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02584 (2013.01); C30B 25/10 (2013.01); C30B 25/165 (2013.01); C30B 25/20 (2013.01); C30B 29/36 (2013.01); H01L 21/0262 (2013.01); H01L 21/02378 (2013.01); H01L 21/02529 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 29/365 (2013.01); H01L 29/1608 (2013.01);
Abstract
A silicon carbide semiconductor substrate includes an epitaxial layer. A difference of a donor concentration and an acceptor concentration of the epitaxial layer is within a range from 1×10/cmto 1×10/cm. Further, the donor concentration and the acceptor concentration of the epitaxial layer are a concentration unaffected by an impurity inside epitaxial growth equipment.
Imai, Fumikazu. (2021). Silicon carbide semiconductor substrate (U.S. Patent No. 11158503). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11158503
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile