The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2017
Filed:
Feb. 05, 2016
Applicant:
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Inventors:
Assignee:
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/04 (2006.01); H01L 21/304 (2006.01); H01L 21/306 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0485 (2013.01); H01L 21/0475 (2013.01); H01L 21/304 (2013.01); H01L 21/30625 (2013.01); H01L 29/45 (2013.01); H01L 29/66068 (2013.01); H01L 29/7395 (2013.01); H01L 29/7802 (2013.01); H01L 29/1608 (2013.01);
Abstract
A method of manufacturing a silicon carbide semiconductor device includes grinding a back surface of a semiconductor substrate formed of silicon carbide to reduce thickness thereof and provide an altered layer that is ground; removing by polishing or etching, the altered layer from the back surface; forming a nickel film on the back surface of the semiconductor substrate after removing the altered layer; heat treating the nickel film to forming a nickel silicide layer by silicidation; and forming a metal electrode on a surface of the nickel silicide layer.