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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9887270 B1

PDFFull Text
Date of Patent:
Feb. 06, 2018

Filed:

Feb. 28, 2017

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;

Inventors:

Masanobu Iwaya, Matsumoto, JP;

Fumikazu Imai, Tsukuba, JP;

Takuya Komatsu, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-shi, Kanagawa, JP;

Attorney:

Rabin & Berdo, P.C.

Primary Examiner:

Zandra Smith

Assistant Examiner:

Lawrence Tyner, Jr

Int. Cl.
CPC ...
H01L 29/45 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/45 (2013.01); H01L 21/02186 (2013.01); H01L 21/0485 (2013.01); H01L 29/1608 (2013.01); H01L 29/401 (2013.01); H01L 29/66068 (2013.01); H01L 29/78 (2013.01);
Abstract

A silicon carbide semiconductor device includes an n-type SiC substrate, a gate oxide film formed on a portion of the surface of the n-type SiC substrate, a gate electrode formed on the gate oxide film, an interlayer insulating film formed so as to cover the gate electrode, a TiN film formed so as to cover the interlayer insulating film, and a Ni silicide layer formed on a surface of the n-type SiC substrate not covered by the interlayer insulating film. The TiN film has two or more layers.

Find Patent Forward Citations

Iwaya, Masanobu. (2018). Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device (U.S. Patent No. 9887270). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9887270

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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