The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2020
Filed:
Mar. 28, 2018
Applicant:
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Inventors:
Assignee:
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 29/872 (2006.01); H01L 29/51 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/36 (2006.01); H01L 29/167 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/0206 (2013.01); H01L 21/02236 (2013.01); H01L 21/02255 (2013.01); H01L 21/02378 (2013.01); H01L 21/02529 (2013.01); H01L 21/02634 (2013.01); H01L 21/049 (2013.01); H01L 21/0475 (2013.01); H01L 21/0495 (2013.01); H01L 29/0619 (2013.01); H01L 29/0623 (2013.01); H01L 29/1095 (2013.01); H01L 29/4236 (2013.01); H01L 29/51 (2013.01); H01L 29/6606 (2013.01); H01L 29/66068 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/872 (2013.01); H01L 21/046 (2013.01); H01L 29/0615 (2013.01); H01L 29/0638 (2013.01); H01L 29/167 (2013.01); H01L 29/36 (2013.01);
Abstract
A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate of a first conductivity type, a first silicon carbide layer of the first conductivity type, and an insulating film. In the silicon carbide semiconductor device, no fluorine or chlorine is detectable in the insulating film, at a boundary layer of the insulating film and the first silicon carbide layer, or at the surface of first silicon carbide layer where the insulating film is provided.