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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10103220 B1

PDFFull Text
Date of Patent:
Oct. 16, 2018

Filed:

Feb. 15, 2018

Method of manufacturing semiconductor device

Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;

Inventors:

Tomonori Katano, Matsumoto, JP;

Fumikazu Imai, Tsukuba, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;

Attorney:

Rabin & Berdo, P.C.

Primary Examiner:

Ngan Ngo

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/861 (2006.01); H01L 21/04 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 21/67 (2006.01); H01L 29/16 (2006.01); H01L 29/167 (2006.01); H01L 29/20 (2006.01); H01L 29/36 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0615 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02675 (2013.01); H01L 21/046 (2013.01); H01L 21/0415 (2013.01); H01L 21/26513 (2013.01); H01L 21/26546 (2013.01); H01L 21/324 (2013.01); H01L 21/67115 (2013.01); H01L 29/0688 (2013.01); H01L 29/16 (2013.01); H01L 29/1602 (2013.01); H01L 29/167 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/36 (2013.01); H01L 29/7811 (2013.01); H01L 29/861 (2013.01); H01L 29/6603 (2013.01); H01L 29/6606 (2013.01); H01L 29/66045 (2013.01); H01L 29/66068 (2013.01); H01L 29/66143 (2013.01); H01L 29/66212 (2013.01); H01L 29/66325 (2013.01); H01L 29/66477 (2013.01); H01L 29/66522 (2013.01); H01L 29/66712 (2013.01); H01L 29/7393 (2013.01); H01L 29/7801 (2013.01); H01L 29/872 (2013.01);
Abstract

An impurity of a second conductivity type is selectively doped in a surface of a semiconductor substrate of a first conductivity type to form doped regions. A portion of a surface of the doped regions is covered by a heat insulating film. At least a remaining portion of the surface of the doped regions is covered by an absorbing film and the doped regions are heated through the absorbing film, enabling an impurity region of the second conductivity type to be formed having two or more of the doped regions that have a same impurity concentration and differing carrier concentrations.

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