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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9401411 B1

PDFFull Text
Date of Patent:
Jul. 26, 2016

Filed:

Jul. 17, 2015

Sic semiconductor device and method for manufacturing the same

Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, JP;

Inventor:

Fumikazu Imai, Kawasaki, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-shi, JP;

Attorney:

Rossi, Kimms & McDowell LLP

Primary Examiner:

Calvin Lee

Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 21/00 (2006.01); H01L 29/49 (2006.01); H01L 21/24 (2006.01); H01L 21/04 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/872 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4975 (2013.01); H01L 21/0485 (2013.01); H01L 21/24 (2013.01); H01L 21/244 (2013.01); H01L 29/0619 (2013.01); H01L 29/45 (2013.01); H01L 29/6606 (2013.01); H01L 29/872 (2013.01); H01L 29/1608 (2013.01);
Abstract

In some aspects of the invention, a layer containing titanium and nickel is formed on an SiC substrate. A nickel silicide layer containing titanium carbide can be formed by heating. A carbon layer precipitated is removed by reverse sputtering. Thus, separation of an electrode of a metal layer formed on nickel silicide in a subsequent step is suppressed. The effect of preventing the separation can be further improved when the relation between the amount of precipitated carbon and the amount of carbon in titanium carbide in the surface of nickel silicide from which the carbon layer has not yet been removed satisfies a predetermined condition.

Find Patent Forward Citations

Imai, Fumikazu. (2016). Sic semiconductor device and method for manufacturing the same (U.S. Patent No. 9401411). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9401411

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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