The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2019
Filed:
Apr. 24, 2018
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;
Abstract
On a surface of an n-type silicon carbide epitaxial layer on an n-type silicon carbide substrate, first and second p-type base regions are formed in the n-type silicon carbide epitaxial layer, an n-type region is formed in the n-type silicon carbide epitaxial layer, a p-type base layer is formed on the n-type region, an n-type source region and a p-type contact region are formed in the p-type base layer, and a trench is formed to a position shallower than the second p-type base region and penetrates the p-type base layer. A first sidewall angle of the trench at a position of the p-type base layer is 80° to 90° with respect to a main surface. A difference of the first sidewall angle and a second sidewall angle of the trench at a position deeper than a boundary of the p-type base layer and the n-type region is 1° to 25°.