Infineon Technologies Ag

Infineon Technologies Austria Ag

Siemens Aktiengesellschaft

Siced Electronics Development Gmbh & Co Kg

Infineon Technology Ag

Roland Rupp

Hans-Joachim Schulze

Francisco Javier Santos Rodriguez

Romain Esteve

Wolfgang Lehnert

Rudolf Elpelt

Anton Mauder

Dethard Peters

Jens Peter Konrath

Michael Treu

Guenther Ruhl

Ronny Kern

Christian Hecht

Rudolf Berger

Andreas Peter Meiser

Ralf Siemieniec

Bernhard Goller

Andre Brockmeier

Thomas Aichinger

Thomas Gutt

Bernd Zippelius

Larissa Wehrhahn-Kilian

Tobias Franz Wolfgang Hoechbauer

Werner Schustereder

Wolfgang Bergner

Alexander Breymesser

Frank Dieter Pfirsch

Caspar Leendertz

Iris Moder

Daniel Kueck

Hans Weber

Wolfgang Werner

Michael Bernhard Sommer

Carsten Von Koblinski

Hermann Gruber

Carsten Schaeffer

Stefan Woehlert

Raimund Foerg

Rene Stein

Matteo Piccin

Gerald Unegg

Josef Unterweger

Johannes Georg Laven

Thomas Basler

Ravi Keshav Joshi

Daniel Domes

Michael Herfurth

Erich Griebl

Michael Rueb

Peter Friedrichs

Matthias Kuenle

Wolfgang Jantscher

Gerhard Metzger-Brueckl

Jochen Hilsenbeck

Guenter Denifl

Andreas Moser

Reinhold Schoerner

Johannes Voelkl

Ilia Zverev

Mihai Draghici

Martin Huber

Franz Hirler

Ralf Otremba

Edward Fuergut

Armin Willmeroth

Roman Baburske

Albert Birner

Martin Gruber

Matteo Dainese

Heinz Mitlehner

Jan Richter

Ingo Muri

Helmut Brech

Stephan Voss

David Laforet

Oliver Häberlen

Herbert Schäfer

Helmut Oefner

Marko Swoboda

Cedric Ouvrard

Gerald Lackner

Andreas Voerckel

Ralf Rieske

Stefan Sedlmaier

Reinhard Ploss

Josef Lutz

Markus Heinrici

Wolfgang Scholz

Manfred Pippan

Daniel Pedone

Sokratis Sgouridis

Michael Knabl

Oana Julia Spulber

Chiew Li Tai

Harald Kuhn

Jia Yi Wong

Wolfgang Bartsch

Alexander Binter

Michael Rüb

Günther Ruhl

A semiconductor substrate includes a base portion, an auxiliary layer and a surface layer. The auxiliary layer is formed on the base portion. The surface layer is formed on the auxiliary layer. The surface layer is in contact with a first main surface of the semiconductor substrate. The auxiliary layer has a different electrochemical dissolution efficiency than the base portion and the surface layer. At least a portion of the auxiliary layer and at least a portion of the surface layer are converted into a porous structure. Subsequently, an epitaxial layer is formed on the first main surface.

Semiconductor device with a porous portion, wafer composite and method of manufacturing a semiconductor device

A semiconductor device includes a trench structure extending from a first surface into a silicon carbide semiconductor body, the trench structure having a gate electrode that is dielectrically insulated from the semiconductor body, a shielding region adjoining a bottom of the trench structure and forming a first pn junction with a drift structure of the semiconductor body, a body region forming a second pn junction with the drift structure, a source zone arranged between the first surface and the body region and forming a third pn junction with the source zone, wherein a contact portion of the body region extends to the first surface, wherein the source zone surrounds the contact portion of the body region at the first surface, and wherein the trench structure forms an enclosed loop at the first surface that surrounds the source zone and the contact portion of the body region at the first surface.

Method of manufacturing silicon carbide semiconductor devices

A method for producing a silicon carbide component includes forming a silicon carbide layer on an initial wafer, wherein the silicon carbide layer comprises a doping region to be produced, forming an electrically conductive contact structure on the surface of the silicon carbide layer, the electrically conductive contact structure, producing a splitting region by pre-damaging the splitting region, wherein the splitting region is produced by laser treating the splitting region before forming the electrically conductive contact, splitting the silicon carbide layer or the initial wafer along the splitting region such that a silicon carbide substrate of the silicon carbide component to be produced is split off, wherein the silicon carbide substrate has a thickness of more than 30 μm, wherein the doping region extends to a surface of the silicon carbide layer before splitting the silicon carbide layer, and wherein splitting along comprises applying a polymer film.

Silicon carbide components and methods for producing silicon carbide components

A method includes: providing a layer of porous silicon carbide supported by a silicon carbide substrate; providing a layer of epitaxial silicon carbide on the layer of porous silicon carbide; forming semiconductor devices in the layer of epitaxial silicon carbide; and separating the silicon carbide substrate from the layer of epitaxial silicon carbide at the layer of porous silicon carbide. The layer of porous silicon carbide includes dopants defining a resistivity of the layer of porous silicon carbide. The resistivity of the layer of porous silicon carbide is different from a resistivity of the silicon carbide substrate. Additional methods are described.

Methods of forming semiconductor devices in a layer of epitaxial silicon carbide

A method of forming a semiconductor device and a semiconductor device are provided. The method includes forming a graphene layer at a first side of a silicon carbide substrate having at least next to the first side a first defect density of at most 5*10/cm; attaching an acceptor layer at the graphene layer to form a wafer-stack, the acceptor layer comprising silicon carbide having a second defect density higher than the first defect density; forming an epitaxial silicon carbide layer; splitting the wafer-stack along a split plane in the silicon carbide substrate to form a device wafer comprising the graphene layer and a silicon carbide split layer at the graphene layer; and further processing the device wafer at the upper side.

Method for forming a semiconductor device and a semiconductor device

A method for processing a wide band gap semiconductor wafer includes: depositing a support layer including semiconductor material at a back side of a wide band gap semiconductor wafer, the wide band gap semiconductor wafer having a band gap larger than the band gap of silicon; depositing an epitaxial layer at a front side of the wide band gap semiconductor wafer; and splitting the wide band gap semiconductor wafer along a splitting region to obtain a device wafer comprising at least a part of the epitaxial layer, and a remaining wafer comprising the support layer.

Methods for processing a wide band gap semiconductor wafer using a support layer and methods for forming a plurality of thin wide band gap semiconductor wafers using support layers

A method of manufacturing a semiconductor device is provided. The method includes forming a carbon structure on a handle substrate at a first surface of the handle substrate. The method further includes attaching a first surface of a semiconductor substrate to the first surface of the handle substrate. The method further includes processing the semiconductor substrate and performing a separation process to separate the handle substrate from the semiconductor substrate. The separation process comprises modifying the carbon structure.

Method of manufacturing a semiconductor device and semiconductor wafer

A power semiconductor device includes a semiconductor substrate having a wide bandgap semiconductor material and a first surface, an insulation layer above the first surface of the semiconductor substrate, the insulation layer including at least one opening extending through the insulation layer in a vertical direction, a front metallization above the insulation layer with the insulation layer being interposed between the front metallization and the first surface of the semiconductor substrate, and a metal connection arranged in the opening of the insulation layer and electrically conductively connecting the front metallization with the semiconductor substrate; wherein the front metallization includes at least one layer that is a metal or a metal alloy having a higher melting temperature than an intrinsic temperature of the wide bandgap semiconductor material of the semiconductor substrate.

Silicon carbide device and method for forming a silicon carbide device

A semiconductor device includes a semiconductor body comprising a first surface and an edge surface, a contact electrode formed on the first surface and comprising an outer edge side, and a passivation layer section conformally covering the outer edge side of the contact electrode. The passivation layer section is a multi-layer stack comprising a first layer, a second layer, and a third layer. Each of the first, second and third layers include outer edge sides facing the edge surface and opposite facing inner edge sides. The outer edge side of the contact electrode is disposed laterally between the inner edge sides and the outer edge sides of each layer.

Semiconductor device with a passivation layer and method for producing thereof

A method for processing a semiconductor wafer is provided. A semiconductor wafer includes a first main surface and a second main surface. Defects are generated inside the semiconductor wafer to define a detachment plane parallel to the first main surface. Processing the first main surface defines a plurality of electronic semiconductor components. A glass structure is provided which includes a plurality of openings. The glass structure is attached to the processed first main surface, each of the plurality of openings leaving a respective area of the plurality of electronic semiconductor components uncovered. A polymer layer is applied to the second main surface and the semiconductor wafer is split into a semiconductor slice and a remaining semiconductor wafer by cooling the polymer layer beneath its glass transition temperature along the detachment plane. The semiconductor slice includes the plurality of electronic semiconductor components.

Method for processing a semiconductor wafer, semiconductor wafer, clip and semiconductor device

A method includes providing a layer of porous silicon carbide supported by a silicon carbide substrate, providing a layer of epitaxial silicon carbide on the layer of porous silicon carbide, forming a plurality of semiconductor devices in the layer of epitaxial silicon carbide, and separating the substrate from the layer of epitaxial silicon carbide at the layer of porous silicon carbide. Additional methods are described.

Methods of re-using a silicon carbide substrate

A method for manufacturing a silicon carbide substrate for an electrical silicon carbide device includes providing a silicon carbide dispenser wafer including a silicon face and a carbon face and depositing a silicon carbide epitaxial layer on the silicon face. Further, the method includes implanting ions with a predefined energy characteristic forming an implant zone within the epitaxial layer, so that the ions are implanted with an average depth within the epitaxial layer corresponding to a designated thickness of an epitaxial layer of the silicon carbide substrate to be manufactured. Furthermore, the method comprises bonding an acceptor wafer onto the epitaxial layer so that the epitaxial layer is arranged between the dispenser wafer and the acceptor wafer. Further, the epitaxial layer is split along the implant zone so that a silicon carbide substrate represented by the acceptor wafer with an epitaxial layer with the designated thickness is obtained.

Method for manufacturing a silicon carbide substrate for an electrical silicon carbide device, a silicon carbide substrate and an electrical silicon carbide device

Provided is a parent substrate that includes a central region and an edge region. The edge region surrounds the central region. A detachment layer is formed in the central region. The detachment layer extends parallel to a main surface of the parent substrate. The detachment layer includes modified substrate material. A groove is formed in the edge region. The groove laterally encloses the central region. The groove runs vertically and/or tilted to the detachment layer.

Parent substrate, wafer composite and methods of manufacturing crystalline substrates and semiconductor devices

A method for producing a silicon carbide component includes forming a silicon carbide layer on an initial wafer, forming a doping region of the silicon carbide component to be produced in the silicon carbide layer, and forming an electrically conductive contact structure of the silicon carbide component to be produced on a surface of the silicon carbide layer. The electrically conductive contact structure electrically contacts the doping region. Furthermore, the method includes splitting the silicon carbide layer or the initial wafer after forming the electrically conductive contact structure, such that a silicon carbide substrate at least of the silicon carbide component to be produced is split off.

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Lauf, Germany

Roland Rupp