The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
Jun. 01, 2022
Infineon Technologies Ag, Neubiberg, DE;
Roland Rupp, Lauf, DE;
Alexander Breymesser, Villach, AT;
Andre Brockmeier, Villach, AT;
Carsten Von Koblinski, Villach, AT;
Francisco Javier Santos Rodriguez, Villach, AT;
Ronny Kern, Finkenstein, AT;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A method for forming semiconductor devices includes: attaching a glass structure to a wide band-gap semiconductor wafer having a plurality of semiconductor devices; forming at least one pad structure electrically connected to at least one doping region of a semiconductor substrate of the wide band-gap semiconductor wafer, by forming electrically conductive material within at least one opening extending through the glass structure; and reducing a thickness of the wide band-gap semiconductor wafer after attaching the glass structure. Additional methods for forming semiconductor devices are described.