The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2023
Filed:
May. 07, 2021
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Hans-Joachim Schulze, Taufkirchen, DE;
Roland Rupp, Lauf, DE;
Francisco Javier Santos Rodriguez, Villach, AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/683 (2006.01); H01L 21/04 (2006.01); H01L 21/78 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66068 (2013.01); H01L 21/0262 (2013.01); H01L 21/02378 (2013.01); H01L 21/02529 (2013.01); H01L 21/02634 (2013.01); H01L 21/02658 (2013.01); H01L 21/048 (2013.01); H01L 21/0475 (2013.01); H01L 21/6835 (2013.01); H01L 21/78 (2013.01); H01L 21/7806 (2013.01); H01L 21/7813 (2013.01); H01L 29/0804 (2013.01); H01L 29/0882 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/66053 (2013.01); H01L 29/7395 (2013.01); H01L 29/7802 (2013.01);
Abstract
A method includes providing a layer of porous silicon carbide supported by a silicon carbide substrate, providing a layer of epitaxial silicon carbide on the layer of porous silicon carbide, forming a plurality of semiconductor devices in the layer of epitaxial silicon carbide, and separating the substrate from the layer of epitaxial silicon carbide at the layer of porous silicon carbide. Additional methods are described.