The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2024
Filed:
Jul. 20, 2022
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Francisco Javier Santos Rodriguez, Villach, AT;
Roland Rupp, Lauf, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/268 (2006.01); H01L 21/02 (2006.01); H01L 29/16 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 21/268 (2013.01); H01L 21/02444 (2013.01); H01L 21/02527 (2013.01); H01L 29/165 (2013.01); H01L 29/1608 (2013.01);
Abstract
A method of manufacturing a semiconductor device is provided. The method includes forming a carbon structure on a handle substrate at a first surface of the handle substrate. The method further includes attaching a first surface of a semiconductor substrate to the first surface of the handle substrate. The method further includes processing the semiconductor substrate and performing a separation process to separate the handle substrate from the semiconductor substrate. The separation process comprises modifying the carbon structure.