The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2003
Filed:
Jan. 23, 2001
Heinz Mitlehner, Uttenreuth, DE;
Ulrich Weinert, Herzogenaurach, DE;
SiCED Electronics Development GmbH & Co. KG, Erlangen, DE;
Abstract
J-FET having a first semiconductor region ( ), which comprises a first contact ( ) with a highly doped contact layer ( ) serving as a source disposed between two second contacts ( ) serving as a gate on its first surface ( ). The three contacts ( ) are each connected to a respective second semiconductor region ( ). The first and second semiconductor regions ( ) are of opposite conductivity types. The second semiconductor regions ( ) connected to the second contacts ( ) extend in the first semiconductor region ( ) below the second semiconductor region ( ) that is connected to the first contact ( ), with the result that the three second semiconductor regions ( ) at least partially overlap in a projection onto a horizontal plane and a channel region ( ) is formed between the three second semiconductor regions ( ) in the first semiconductor region ( ).