The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2009
Filed:
Mar. 19, 2003
Rudolf Elpelt, Erlangen, DE;
Heinz Mitlehner, Uttenreuth, DE;
Reinhold Schörner, Grossenseebach, DE;
Rudolf Elpelt, Erlangen, DE;
Heinz Mitlehner, Uttenreuth, DE;
Reinhold Schörner, Grossenseebach, DE;
SiCED Electronics Development GmbH & Co. KG, Erlangen, DE;
Abstract
The invention relates to a semiconductor structure for controlling a current (I), comprising a first n-conductive semiconductor region (), a current path that runs within the first semiconductor region () and a channel region (). The channel region () forms part of the first semiconductor region () and comprises a base doping. The current (I) in the channel region () can be influenced by means of at least one depletion zone (). The channel region () contains an n-conductive channel region () for conducting the current, said latter region having a higher level of doping than the base doping. The conductive channel region () is produced by ionic implantation in an epitaxial layer () that surrounds the channel region ().