The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2023
Filed:
Sep. 14, 2020
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Assignee:
INFINEON TECHNOLOGIES AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H 3/20 (2006.01); H02H 9/04 (2006.01); H01L 27/06 (2006.01); H01L 49/02 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/78 (2006.01); H01L 29/808 (2006.01); H01L 29/92 (2006.01);
U.S. Cl.
CPC ...
H02H 9/04 (2013.01); H01L 27/0629 (2013.01); H01L 28/20 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/7813 (2013.01); H01L 29/8083 (2013.01); H01L 29/92 (2013.01);
Abstract
An apparatus includes a unipolar power transistor and an RC snubber. The RC snubber has a capacitor between a poly silicon structure and a semiconductor substrate. The capacitor has a p-n junction. The RC snubber has a resistor between a source of the unipolar power transistor and a first layer forming the capacitor. The unipolar transistor and the RC snubber are coupled in parallel. The RC snubber and the unipolar power transistor are formed monolithically on the semiconductor substrate.