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Shanghai, China

Shanghai Huali Integrated Circuit Corporation

USPTO Granted Patents = 103

Forward Citations = 4

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140 inventors (with patents filed for the assignee):

Jianghua Leng (8 out of 8 patents)

Tianpeng Guan (8 out of 9 patents)

Jun Yang (8 out of 126 patents)

4. Haoyu Chen (7 out of 22 patents)

5. Zhi Tian (7 out of 19 patents)

6. Zhonghua Li (7 out of 9 patents)

7. Wenyin Weng (6 out of 6 patents)

8. Hua Shao (6 out of 23 patents)

9. Chanyuan Hu (6 out of 6 patents)

10. Runling Li (5 out of 10 patents)

11. Liyao Liu (5 out of 6 patents)

12. Qiang Yan (5 out of 17 patents)

13. Zhigang Yang (5 out of 5 patents)

14. Nan Li (5 out of 22 patents)

15. Yingju Chen (4 out of 4 patents)

Core Competencies:

Super Flash Memory

High-Voltage Devices

Silicon Controlled Rectifier

Gate Oxide Thickness

Metal Gate Devices

MOS Transistors

FDSOI Hybrid Region

FinFET Technology

SRAM Circuits

Epitaxial Growth

Dielectric Layer Management

Temperature Stress Testing

103 patents: Sort by Forward Citations

1. 12507460 - MV device and method for manufacturing same (2025-12-23),

2. 12506039 - Failure analysis and location method for short circuit structure (2025-12-23),

3. 12501680 - Method for manufacturing a metal gate by a gate replacement process including carbon Ion implantation of a zero interlayer dielectric (2025-12-16),

4. 12501648 - HV device and method for manufacturing same (2025-12-16),

5. 12500128 - Four-terminal resistance testing structure (2025-12-16),

6. 12484216 - Method for manufacturing a super flash memory (2025-11-25),

7. 12453120 - HV device and method for manufacturing same (2025-10-21),

8. 12446297 - Low voltage triggering silicon controlled rectifier (2025-10-14),

9. 12444656 - Method for monitoring gate oxide thickness (2025-10-14),

10. 12432961 - Integrated structure of MOS transistors having different working voltages and method for manufacturing same (2025-09-30),

11. 12431357 - Method for manufacturing high-voltage metal gate device (2025-09-30),

12. 12424451 - Method for reducing contact resistance (2025-09-23),

13. 12424436 - Process method for improving reliability of metal gate high-voltage device (2025-09-23),

14. 12417907 - Method for increasing bridging process window of contact hole and gate of device (2025-09-16),

15. 12400908 - Epitaxial growth method for FDSOI hybrid region (2025-08-26),

Shanghai Huali Integrated Circuit Corporation is a leading semiconductor company based in Shanghai, China. With expertise in IC design, manufacturing, and packaging, Huali offers a wide range of integrated circuits and related solutions for various industries. Their cutting-edge technologies and commitment to innovation enable them to deliver high-quality products that meet the demands of customers worldwide. Huali's dedication to customer satisfaction and their strong focus on research and development have established them as a reliable and trusted partner in the global semiconductor market.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 23 2025

103 Patents

#34 in Shanghai

#302 in China

#7,368 in the World

Shanghai, China

Shanghai Huali Integrated Circuit Corporation

Forward Citations = 4

140 inventors:

Jianghua Leng (8 out of 8 patents)

Tianpeng Guan (8 out of 9 patents)

Jun Yang (8 out of 126 patents)

4. Haoyu Chen (7 out of 22 patents)

5. Zhi Tian (7 out of 19 patents)

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