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Shanghai, China

Shanghai Huali Integrated Circuit Corporation

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USPTO Granted Patents = 138

Forward Citations = 10

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189 inventors (with patents filed for the assignee):

Haoyu Chen (11 out of 28 patents)

Zhi Tian (10 out of 23 patents)

Jun Yang (9 out of 129 patents)

4. Jianghua Leng (8 out of 8 patents)

5. Tianpeng Guan (8 out of 9 patents)

6. Qiwei Wang (7 out of 18 patents)

7. Zhonghua Li (7 out of 9 patents)

8. Tao Liu (7 out of 64 patents)

9. Wenyin Weng (6 out of 6 patents)

10. Hua Shao (6 out of 24 patents)

11. Chanyuan Hu (6 out of 6 patents)

12. Qiang Yan (6 out of 50 patents)

13. Runling Li (5 out of 10 patents)

14. Liyao Liu (5 out of 6 patents)

15. Jun Tan (5 out of 14 patents)

Core Competencies:

FinFET

Epitaxial Growth

Metal Gate

FDSOI

Capacitive DAC

CIS Pixel

High-Voltage Device

Memory Device

MOS Transistor

Overlay Metrology

Source/Drain Epitaxy

Silicon Controlled Rectifier

138 patents: Sort by Forward Citations

1. 12772815 - Contact filling method (2026-10-20),

2. 12772800 - Method for monitoring step height of epitaxial layer of CMOS device (2026-10-20),

3. 12772568 - Method for improving FDSOI device leakage (2026-10-20),

4. 12761545 - System for optimizing OPC lithography model parameters (2026-10-13),

5. 12740085 - Method for reducing damage to floating gate polysilicon during etching (2026-09-15),

6. 12740038 - Process method for improving SRAM operating speed (2026-09-15),

7. 12724348 - Method for adjusting local thickness of photoresist (2026-09-01),

8. 12684858 - Process integration method for improving leakage in MV device (2026-07-14),

9. 12677652 - Bottom layer metal interconnection line structure (2026-07-07),

10. 12666657 - Super flash and method for manufacturing same (2026-06-23),

11. 12646571 - Memory circuit with differential sensing architecture (2026-06-02),

12. 12642066 - Method of back end of line metal via process (2026-05-26),

13. 12638491 - Device variation extraction chip (2026-05-26),

14. 12626774 - Distributed power supply switching circuit for efuse memory (2026-05-12),

15. 12622038 - MV device and method for manufacturing same (2026-05-05),

Company Overview

Shanghai Huali Integrated Circuit Corporation specializes in advanced semiconductor technologies, focusing on FinFET technology and its applications. The company is engaged in the development and manufacturing of various integrated circuits, leveraging expertise in epitaxial growth, metal gate structures, and fully depleted silicon-on-insulator (FDSOI) processes. Huali's innovations extend to capacitive digital-to-analog converters (DACs), CMOS image sensor (CIS) pixels, high-voltage devices, and memory solutions, positioning it as a key player in the semiconductor industry in China.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 27 2026

138 Patents

#25 in Shanghai

#255 in China

#5,873 in the World

Shanghai, China

Shanghai Huali Integrated Circuit Corporation

Forward Citations = 10

189 inventors:

Haoyu Chen (11 out of 28 patents)

Zhi Tian (10 out of 23 patents)

Jun Yang (9 out of 129 patents)

4. Jianghua Leng (8 out of 8 patents)

5. Tianpeng Guan (8 out of 9 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Shanghai Huali Integrated Circuit Corporation. Retrieved from https://idiyas.com/company/shanghai-huali-integrated-circuit

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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