The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2026

Filed:

Apr. 25, 2024
Applicant:

Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;

Inventors:

Zexiao Yu, Shanghai, CN;

Ren Li, Shanghai, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10P 74/20 (2026.01); G01B 7/06 (2006.01);
U.S. Cl.
CPC ...
H10P 74/203 (2026.01); G01B 7/06 (2013.01);
Abstract

This application discloses a method for monitoring SH of an epitaxial layer of a CMOS device, fabricating a measurement reference device, AA and STI structures of the measurement reference device being the same as those of the CMOS device to be monitored, polysilicon lines being formed on the AA and STI structures of the measurement reference device, the polysilicon lines on the AA structures being connected in series to obtain a first polysilicon line string, the polysilicon lines on the STI structures being connected in series to obtain a second polysilicon line string; obtain current I1 flowing through the first polysilicon line string and current I2 flowing through the second polysilicon line string; and performing calculation according to I1 and I2 to obtain SH of an epitaxial layer of the measurement reference device as SH of an epitaxial layer of the CMOS device to be monitored.


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Yu, Zexiao. (2026). Method for monitoring step height of epitaxial layer of cmos device (U.S. Patent No. 12772800). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12772800

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