Zexiao Yu

Title: Zexiao Yu and CMOS Epitaxial-Layer Monitoring

Introduction

Zexiao Yu is an inventor based in Shanghai, China, whose patent work addresses process monitoring for CMOS devices. His disclosed invention focuses on measuring the step height of an epitaxial layer.

Latest Patents

Yu is associated with 1 patent: “Method for Monitoring Step Height of Epitaxial Layer of CMOS Device.” The method uses a measurement reference device with active-area (AA) and shallow-trench-isolation (STI) structures matching those of the CMOS device being monitored. Polysilicon lines are formed on both types of structures and connected into separate series strings. By measuring the current through each string and calculating from those measurements, the method determines the epitaxial-layer step height of the reference device and uses it as the step height for the CMOS device under monitoring.

Career Highlights

Yu is associated with Shanghai Huali Integrated Circuit Corporation. His patent describes a measurement approach intended to monitor a key structural feature in CMOS device fabrication.

Collaborations

Ren Li is identified as Yu’s coworker. The provided information does not specify their roles or describe a particular joint project.

Conclusion

Zexiao Yu’s disclosed patent presents a current-based method for estimating epitaxial-layer step height using matched reference structures, connecting his work with semiconductor process monitoring at Shanghai Huali Integrated Circuit Corporation.