This inventor holds 1 USPTO granted patent. Top assignee: Shanghai Huali Integrated Circuit Corporation. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Ren Li and CMOS Epitaxial-Layer Monitoring
Introduction
Ren Li is an inventor associated with Shanghai Huali Integrated Circuit Corporation in Shanghai, China. His patent work includes a method for monitoring the step height of an epitaxial layer in a CMOS device.
Latest Patents
The provided information identifies one patent for Ren Li: “Method for Monitoring Step Height of Epitaxial Layer of CMOS Device.” The method uses a measurement reference device whose active-area (AA) and shallow-trench-isolation (STI) structures match those of the CMOS device being monitored. Polysilicon lines are formed on the AA and STI structures and connected into separate series strings. By measuring the current through each string and calculating from those measurements, the method determines the epitaxial-layer step height in the reference device and uses it as the step height for the CMOS device being monitored. Ren Li is credited with 1 patent in the information provided.
Career Highlights
Ren Li’s listed patent focuses on semiconductor-device process monitoring. Its approach uses electrical measurements from matched reference structures to estimate epitaxial-layer step height.
Collaborations
Zexiao Yu is identified as Ren Li’s coworker. The provided information does not specify whether Yu collaborated on this patent.
Conclusion
Ren Li’s listed invention applies a reference-device measurement method to monitor epitaxial-layer step height in CMOS manufacturing.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile