Company Filing History:
5 out of 103 
2 out of 150 
10 out of 832,843 Years Active: 2010-2025
Title: **Qiang Yan: Pioneering Innovations in Semiconductor Technology**
Introduction
Qiang Yan is a distinguished inventor based in Shanghai, China, known for his significant contributions to the field of semiconductor technology. With a remarkable portfolio of 15 patents, Yan has dedicated his career to advancing the manufacturing processes and structures of fin semiconductor devices.
Latest Patents
Among his latest innovations, Yan has developed a patented manufacturing method for fin semiconductor devices. This method involves providing a substrate and patterning a fin channel base that contacts the substrate. The process continues by epitaxially growing a top part of the fin channel base, which extends sideways and upward to create a fin channel core. Subsequently, the fin channel base undergoes oxidation to form a fin channel structure, with the fin channel core enveloped by an oxide layer. Finally, the oxide layer is removed to expose the fin channel core, which is suspended over the substrate. Yan’s inventive work also includes an additional method that focuses on forming a fin channel structure through a two-step etching process, ensuring that the upper portion of the fin channel remains protected from oxidation while allowing critical base part oxidation.
Career Highlights
Throughout his career, Qiang Yan has made substantial contributions to the semiconductor industry while working for prominent companies, including Shanghai Huali Integrated Circuit Corporation. His expertise in semiconductor devices has placed him at the forefront of innovation, earning him respect among peers and industry leaders.
Collaborations
Qiang Yan has collaborated with various professionals in the industry, notably working alongside colleagues Jun Tan and Qiuming Huang. These collaborations have played a significant role in advancing Yan's research and development initiatives, furthering innovation in the semiconductor field.
Conclusion
Qiang Yan’s pioneering work in the development of fin semiconductor devices exemplifies his commitment to innovation. With 15 patents to his name, his contributions not only enhance semiconductor technology but also inspire future inventors and researchers in the field. As he continues to push the boundaries of technology, Qiang Yan remains a prominent figure in the world of inventions.