The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Jun. 09, 2022
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Yongyue Chen, Shanghai, CN;
Qiang Yan, Shanghai, CN;
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Abstract
The present application discloses an epitaxial growth method for an FDSOI hybrid region, comprising: step 1, providing an FDSOI substrate structure, and forming a hard mask layer; step 2, forming a trench in the entire hybrid region, wherein the bottom surface of the trench is below or level with the top surface of the semiconductor body layer; step 3, performing oxidation to form a first oxide layer on the exposed surfaces of the semiconductor body layer and the semiconductor top layer; step 4, fully etching the first oxide layer, and forming an inner sidewall composed of the remaining first oxide layer on the side surface of the trench in a self-aligned manner; and step 5, performing epitaxial growth to form, in the trench, a semiconductor epitaxial layer in contact with the semiconductor body layer.