The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
Aug. 16, 2023
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Abstract
The present application discloses an epitaxial growth method for an FDSOI hybrid region, comprising: step, providing an FDSOI substrate structure; step, forming a trench; step, performing first isotropic epitaxial growth, wherein a top surface of a first semiconductor epitaxial sublayer is located in a plane between a top surface and a bottom surface of a dielectric buried layer, and a second semiconductor epitaxial sublayer comprise a lateral protruding structure on the side face of the semiconductor top layer; and step, performing second epitaxial growth having a growth rate of the first crystalline face, which is greater than a growth rate of the second crystalline face, wherein the third semiconductor epitaxial sublayer has a chamfered recess near the side face of the semiconductor top layer, finally the lateral protruding structure is located in the chamfered recess.