Jiaqi Hong

Title: Jiaqi Hong: Innovator in Epitaxial Growth Methods

Introduction

Jiaqi Hong is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to epitaxial growth methods.

Latest Patents

Jiaqi Hong holds a patent for an "Epitaxial growth method for FDSOI hybrid region." This patent discloses a method that includes several steps, such as providing an FDSOI substrate structure, forming a trench, and performing isotropic epitaxial growth. The method ensures that the top surface of a first semiconductor epitaxial sublayer is strategically positioned between the top and bottom surfaces of a dielectric buried layer. Additionally, the patent describes a second epitaxial growth process that optimizes the growth rates of different crystalline faces, resulting in a third semiconductor epitaxial sublayer with a unique chamfered recess.

Career Highlights

Jiaqi Hong is currently employed at Shanghai Huali Integrated Circuit Corporation, where he continues to advance his research and development efforts in semiconductor technologies. His work has garnered attention for its potential applications in improving integrated circuit performance.

Collaborations

Jiaqi collaborates with notable colleagues, including Qiang Yan and Jun Tan, who contribute to his research endeavors and help drive innovation within their field.

Conclusion

Jiaqi Hong's contributions to epitaxial growth methods highlight his role as a key innovator in semiconductor technology. His patent reflects a commitment to advancing the capabilities of integrated circuits, showcasing the importance of innovation in this rapidly evolving industry.