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Shanghai Huali Integrated Circuit Corporation

Shanghai Huali Microelectronics Corporation

Yan, Qiang

Qiang Yan

Jun Tan

Qiuming Huang

Dong Zhang

Yihui Shen

Chaoqi Jiang

Haifeng Niu

Yongyue Chen

Jiaqi Hong

The present application discloses an epitaxial growth method for an FDSOI hybrid region, comprising: step 1, providing an FDSOI substrate structure, and forming a hard mask layer; step 2, forming a trench in the entire hybrid region, wherein the bottom surface of the trench is below or level with the top surface of the semiconductor body layer; step 3, performing oxidation to form a first oxide layer on the exposed surfaces of the semiconductor body layer and the semiconductor top layer; step 4, fully etching the first oxide layer, and forming an inner sidewall composed of the remaining first oxide layer on the side surface of the trench in a self-aligned manner; and step 5, performing epitaxial growth to form, in the trench, a semiconductor epitaxial layer in contact with the semiconductor body layer.

Epitaxial growth method for FDSOI hybrid region

The present application discloses an epitaxial growth method for an FDSOI hybrid region, comprising: step, providing an FDSOI substrate structure; step, forming a trench; step, performing first isotropic epitaxial growth, wherein a top surface of a first semiconductor epitaxial sublayer is located in a plane between a top surface and a bottom surface of a dielectric buried layer, and a second semiconductor epitaxial sublayer comprise a lateral protruding structure on the side face of the semiconductor top layer; and step, performing second epitaxial growth having a growth rate of the first crystalline face, which is greater than a growth rate of the second crystalline face, wherein the third semiconductor epitaxial sublayer has a chamfered recess near the side face of the semiconductor top layer, finally the lateral protruding structure is located in the chamfered recess.

A manufacturing method of a fin semiconductor device comprises: providing a substrate, wherein a fin channel base is patterned on and in contact with the substrate; epitaxially growing a top part of the fin channel base and extending the top part of the fin channel base sideways and upward to form a fin channel core; oxidizing the fin channel base to form a fin channel structure, wherein the fin channel structure comprises the fin channel core surrounded with an oxide layer at the top part of the fin channel base and an intermediate part of the fin channel base under the top part; and removing the oxide layer to expose the fin channel core, wherein the fin channel core suspends over the substrate.

Fin semiconductor device and method for making the same

A manufacturing method of a fin semiconductor device is disclosed. The method includes: providing a substrate; etching the substrate the first time to form a fin channel structure which protrudes from the substrate; forming a protective oxide layer on two sidewalls and the top surface of the fin channel structure; etching a the second time to form the base part of the fin channel structure, wherein the base part is not covered by the protective layer; oxidizing the base part of the fin channel, when the upper part of the fin channel is blocked from oxidation by the protective layer; removing both the protective layer and the oxidized base part of the fin channel structure, so that the upper part of the fin channel structure is suspended over the substrate.

The present disclosure discloses a semiconductor device, which comprises: an embedded gate structure with a bottom embedded in a semiconductor substrate; a channel region formed below the bottom surface of the embedded gate structure; a source region and a drain region formed on the two sides of the embedded gate structure; an embedded epitaxial layer formed in the source region or the drain region, the bottom surface of the embedded gate structure being in flush with the maximum stress position of the embedded epitaxial layer. The present disclosure further discloses a method for manufacturing a semiconductor device. The present disclosure can enable the channel region to be located in the maximum stress region of the embedded epitaxial layer, thereby improving the mobility of channel carriers to the utmost extent and improving the conduction current of the device.

Semiconductor device and method for manufacturing the same

A structure of SiGe source/drain and a preparation method thereof are disclosed in the present invention. Firstly, providing a semiconductor single crystal silicon substrate. Secondly, etching the semiconductor single crystal silicon substrate to form recesses on both sides of the gate. Thirdly, epitaxially growing a SiGe seed layer and a SiGe bulk layer in the recesses in turn. Fourthly, subjecting the SiGe bulk layer to a crystal plane treatment with a mixed-gases. Fifthly, epitaxially growing a lattice change layer on the SiGe bulk layer. Finally, epitaxially growing a cap layer on the lattice change layer. The preparation method of the present invention can greatly improve the morphology of the SiGe epitaxy in the incomplete Un-tuck structure, and promote the formation of the subsequent metal silicide (NiSi), so that problems such as abnormal resistance and leakage of active area (AA leakage) can be effectively prevented.

SiGe source/drain structure

SiGe source/drain structure and preparation method thereof

A wind power electricity generating system and its generation method, comprising a circuit frame, towers that support the circuit frame, a plurality of rails attached to the circuit frame, a plurality of interconnected trolleys, each trolley is connected with a blade whose blade rotation angle is adjustable, a plurality of generators, a plurality of positioning devices capable of sending and receiving signals deployed on the circuit frame, and devices for sending and receiving signals for adjusting a rotation angle of the blades being deployed at each trolley. Current collectors are deployed at the trolley.

Circuit wind power system and method for generating electricity using the same

A wind power electricity generating system and its generation method, comprising a circuit frame, towers that support the circuit frame, a plurality of rails attached to the circuit frame, a plurality of interconnected trolleys, each trolley is connected with a blade whose blade rotation angle is adjustable, a plurality of generators, a plurality of positioning devices capable of sending and receiving signals deployed on the circuit frame, and a wireless servo signal transmission device capable of sending and receiving signals is deployed at each trolley. Current collectors are deployed at the trolley.

A support for a large vertical axis wind turbine including a tower frame, a platform, a vertical central axis, and a vertical axis windmill including a plurality of blades and supporting arms. The platform is disposed on the tower frame for installing and fixing a generator. The vertical central axis and the vertical axis windmill are supported by the tower frame. The tower frame is a truss structure and includes at least three sub-tower frames which are in parallel with each other and form a regular polygon from top view. The sub-tower frames are hollow tubes. The ratio of a diameter of the vertical axis windmill to a distance between two adjacent sub-tower frames is between 2.5 and 6. The ratio of the diameter of the vertical axis windmill to a height of the tower frame is between 3 and 0.5.

Support for a large vertical axis wind turbine

The invention relates to a vertical axis wind turbine, and in particular to an apparatus and method for transporting the vertical axis wind turbine. The method for transporting the vertical axis wind turbine, including the steps of: employing an apparatus to be a box or frame; situating a generator horizontally in the apparatus; fixing an upper flange and lower flange to a vertical shaft; fixing the base of the generator on the corresponding surface of the apparatus through holes at the base of the generator; and supporting the other end of the vertical shaft by a supporting object.

Apparatus and method for transporting vertical axis wind turbine

A wind mill structure of a lift-type vertical axis wind turbine. The lift-type vertical axis wind turbine includes a vertical shaft and the wind mill includes a plurality of blades and supporting arms. The supporting arms hold the blades, and the blades are connected to the vertical shaft via the supporting arms. A setting angle, formed by a chord of the blades and a tangent line that goes through the center of the blades, ranges from &#x2212;12&#xb0; to 12&#xb0;. An angle, formed by the chord of the blade and the rotatable supporting arm, ranges from 7&#xb0; to 100&#xb0;. The wind mill can maintain relatively stable rotation speeds under wind speeds exceeding the rated wind speed by adjusting the angle of the supporting arms, thereby ensuring stable output from the vertical axis wind turbine.

Wind mill structure of lift-type vertical axis wind turbine

A vertical axis wind turbine including: a vertical axis wind mill having a vertical shaft and a generator having a generator rotor shaft, wherein the vertical shaft of the wind mill share the same shaft with the generator rotor shaft. This arrangement simplifies the structure and increases the stability, reliability, and service lifetime of vertical axis wind turbines by making on-site assembly easy and cutting the on-site workload and cost, without undermining the wind resistance capability and safety prompting wider application of vertical axis wind turbines.

Vertical axis wind turbine

A vertical axis wind turbine comprising: a plurality of support arms () connected with a vertical axis (), a wind rotor comprising a plurality of blades () connected to the blade support arms (), the wind rotor having a rotation radius and the blades () having a chord length; wherein an airfoil of the blade is an asymmetrical camber airfoil, the convex surface () of the blade () faces vertical axis (), and a ratio of the rotation radius of the wind rotor (R) to the chord length of the blade (L) is between about 1.8 and about 4.

Vertical axis wind turbine and method of installing blades therein

A blade support limb structure of a vertical axis wind power generator includes a fixed support limb () and a rotatable support limb (), one end () of the rotatable support limb is connected with one end () of the fixed support limb and the rotatable support limb may rotate around it. The structure keeps a wind wheel at stable rotation speed in the case the environmental wind speed exceeds the rated wind speed, thereby to ensure that vertical axis wind power generator outputs constant power. The structure solves a problem of constant power output of the vertical axis wind power generator from hundreds watts to thousands watts, so its applications are wide.

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Shanghai, China

Qiang Yan