Shanghai, China

Jianghua Leng

USPTO Granted Patents = 8 

Average Co-Inventor Count = 4.7

ph-index = 1


Company Filing History:


Years Active: 2022-2025

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8 patents (USPTO):Explore Patents

Title: Jianghua Leng: Innovator in Memory Device Technology

Introduction

Jianghua Leng is a prominent inventor based in Shanghai, China. With a commendable portfolio of seven patents, he has made significant contributions to the field of memory device technology, showcasing his expertise and innovative spirit.

Latest Patents

Among his latest inventions, Jianghua Leng has developed a semi-floating gate memory device and a method for fabricating it. This device features a double control gate semi-floating gate structure with high-K/metal and silicon oxide/polysilicon gates. By using an epitaxial growth structure, he successfully forms the control gate silicon layer along with the source and drain regions. This innovative approach eliminates the need for separate source and drain ion implantation, resulting in reduced fabrication costs and fewer resources.

Another noteworthy patent is the semi-floating gate device itself, which includes a structure covering a selected area of a first well region to form a conductive channel. Notably, the floating gate structure integrates with a lightly doped drain region, forming a PN structure that enhances performance and efficiency. The design also incorporates self-alignment of the source region with the floating gate structure, optimizing the device's functionality.

Career Highlights

Jianghua Leng is currently employed at Shanghai Huali Integrated Circuit Corporation, where he actively contributes to advancing memory device technologies. His innovative work has significantly impacted the development of integrated circuits, enhancing their efficiency and performance.

Collaborations

Throughout his career, Jianghua has collaborated with esteemed colleagues such as Tianpeng Guan and Zhonghua Li. Together, they have worked on various projects that aim to push the boundaries of current technology and improve memory device applications.

Conclusion

Jianghua Leng stands out as a key figure in the innovation of memory device technology. His recent patents reflect his dedication to improving fabrication methods and device structures, paving the way for more efficient and cost-effective solutions in the field of integrated circuits. With continued collaboration and innovation, Jianghua is poised to make even greater contributions to the world of technology.

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