The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2024
Filed:
Sep. 27, 2022
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Heng Liu, Shanghai, CN;
Zhigang Yang, Shanghai, CN;
Jianghua Leng, Shanghai, CN;
Tianpeng Guan, Shanghai, CN;
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Abstract
The present application discloses a semi-floating gate memory device, which is a double control gate semi-floating gate memory device with a high-K/metal gate and a silicon oxide/polysilicon gate. A control gate epitaxial silicon layer, a source region and a drain region are formed by an epitaxial growth structure, separate source and drain ion implantation is not needed, the mask required for source and drain ion implantation is saved, and the fabrication cost is low. The present application further discloses a method for fabricating the semi-floating gate memory device.