Zhigang Yang

Title: Innovations by Zhigang Yang: A Pioneer in Semiconductor Technology

Introduction

Zhigang Yang, an esteemed inventor based in Shanghai, China, has made significant contributions to the field of semiconductor technology. With a portfolio of five patents, Yang is known for his innovative approaches to creating advanced transistor and memory device architectures that enhance performance and reduce manufacturing costs.

Latest Patents

Among his latest inventions, Yang has developed several notable patents that illustrate his expertise:

1. **Method for Making Semi-Floating Gate Transistor with Three-Gate Structure**: This patent discloses a detailed method for fabricating a semi-floating gate transistor with a three-gate structure. The process involves forming trench structures, creating polysilicon layers, and strategically cutting them to expose the active region, resulting in the formation of three gates: a first gate from the first polysilicon layer and second and third gates from the second polysilicon layer.

2. **Semi-Floating Gate Memory Device and Method for Fabricating the Same**: This innovation describes a double control gate semi-floating gate memory device that employs a high-K/metal gate alongside a silicon oxide/polysilicon gate. Yang's method simplifies the fabrication process by eliminating the need for separate source and drain ion implantation, ultimately reducing costs while maintaining efficiency.

Career Highlights

Currently, Zhigang Yang is associated with Shanghai Huali Integrated Circuit Corporation, a prominent entity in the semiconductor industry. His role at the company allows him to leverage his extensive knowledge in integrated circuit design and fabrication processes, further contributing to advancements in semiconductor technologies.

Collaborations

Throughout his career, Yang has worked closely with notable colleagues such as Jianghua Leng and Tianpeng Guan. Their collaborations have fostered an environment of innovation at Shanghai Huali Integrated Circuit Corporation, allowing them to tackle complex engineering challenges and push the boundaries of semiconductor device capabilities.

Conclusion

Zhigang Yang's inventive spirit and dedication to technology have made him a valuable contributor to the field of semiconductor innovation. Through his patents, particularly in the realms of transistor and memory device design, he continues to influence the landscape of integrated circuit technology, marking his professional journey as a testament to the importance of innovation in driving industry advancements.