The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Sep. 07, 2023
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Qiwei Wang, Shanghai, CN;
Yaoyu Zhan, Shanghai, CN;
Tao Liu, Shanghai, CN;
Zhigang Zhang, Shanghai, CN;
Haoyu Chen, Shanghai, CN;
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Abstract
The application discloses a process integration method for improving leakage in MV devices, comprising: step I: forming gate structures, step II: depositing a first spacer material layer, step III: forming an additional spacer material layer, step IV: forming a first mask layer to cover an MV device formation region and open an LV device formation region, step V: performing an isotropic first etching to remove the additional spacer material layer from the LV device formation region, step VI: performing an anisotropic second etching to form a first layer of spacers of the low voltage region, step VII: forming a second mask layer to open the MV device formation region and to cover the LV device formation region, step VIII: performing an anisotropic third etching to form a first layer of spacers of the medium voltage region and additional spacers, and step IX: depositing and etching a second spacer material layer.