The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2026
Filed:
Jun. 27, 2023
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Zhenbin Wang, Shanghai, CN;
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Abstract
The present application discloses a method for optimizing OPC lithography model parameters. Preliminary suboptimal parameter combinations in proximity to a plurality of local minima of a lens beam focus BF and defocus start DS are quickly found by means of a random direction search method; and then an optimal parameter combination of the lens beam focus BF and defocus start DS is finally obtained on the basis of the suboptimal parameter combinations by means of a precise search method. An optimal parameter solution can be found quickly by combining the random direction search method and the precise search method, without artificially configuring an initial search point. Moreover, the algorithm has a high convergence rate and strong robustness, and can quickly and precisely obtain parameters such as the lens beam focus BF and defocus start DS in modeling of an OPC lithography model.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile