The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2026

Filed:

Aug. 28, 2023
Applicant:

Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;

Inventors:

Qiwei Wang, Shanghai, CN;

Tao Liu, Shanghai, CN;

Haoyu Chen, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/78 (2006.01); H10D 30/01 (2025.01); H10D 30/60 (2025.01); H10D 64/01 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 64/519 (2025.01); H10D 30/022 (2025.01); H10D 30/601 (2025.01); H10D 64/01 (2025.01);
Abstract

An MV device is disclosed. A gate conductive material layer is segmented into a body gate conductive material layer and two edge gate conductive material layers along a channel length direction. The two edge gate conductive material layers are located on two sides of the body gate conductive material layer and are spaced apart from the body gate conductive material layer by dielectric segmentation structures. The lightly doped drain regions extend under the first side face and the second side face of the gate conductive material layer, to reach under the body gate conductive material layer, such that the channel region becomes located under the body gate conductive material layer; and the edge gate conductive material layers and the dielectric segmentation structures become located above the lightly doped drain regions. The present disclosure also discloses a method for manufacturing an MV device.


Find Patent Forward Citations

Loading…