Company Filing History:
Years Active: 2021-2023
Title: **Liyao Liu: Innovator in FinFET Transistor Technology**
Introduction
Liyao Liu is an accomplished inventor based in Shanghai, China, known for his significant contributions to semiconductor technology. With a total of six patents, Liu has established himself as a leading figure in the field of FinFET (Fin Field-Effect Transistor) transistors. His innovations are vital for advancements in modern electronics, enhancing efficiency in cutting-edge manufacturing processes.
Latest Patents
Among Liu's latest inventions is a groundbreaking method for cutting off fins in field-effect transistors. This method involves several steps: the formation of fins and first spacing regions, where two types of fins are configured—one for cutting off and the other for reserving. By employing a first material layer to fill the spacing regions and creating a pattern structure aligned with the first type fins, the process enhances lithography efficiency by utilizing less advanced equipment.
Additionally, Liu has developed a FinFET transistor cut etching process method that involves creating a photoresist pattern to define cut etching regions and forming layers that lead to the successful cut etching of the FinFET transistor. This innovative method not only enlarges the process window but also reduces manufacturing costs, making it a significant addition to the semiconductor industry.
Career Highlights
Liyao Liu has worked with prominent companies such as Shanghai Huali Integrated Circuit Corporation and Shanghai Huali Integrated Circuit Manufacturing Co., Ltd. His career reflects a strong commitment to advancing technologies in integrated circuits and transistors, contributing to high-performance electronic devices.
Collaborations
Throughout his career, Liu has collaborated with talented professionals in the semiconductor sector, including coworkers Yingju Chen and Chanyuan Hu. These collaborations have been essential in driving forward groundbreaking projects and research, ultimately leading to his numerous patent applications and innovations.
Conclusion
Liyao Liu's work has had a profound impact on the field of semiconductor technology, particularly in FinFET transistor innovations. Through his six patents, he continues to push the boundaries of what is possible in electronic manufacturing, paving the way for the next generation of technological advancements. His contributions are indispensable for companies aiming to improve their processes and offer more efficient solutions in the industry.