The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2023
Filed:
Feb. 02, 2021
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Yenchan Chiu, Shanghai, CN;
Yingju Chen, Shanghai, CN;
Liyao Liu, Shanghai, CN;
Chanyuan Hu, Shanghai, CN;
SHANGHAI HUALI INTEGRATED CIRCUIT CORPORATION, Shanghai, CN;
Abstract
A method for cutting off a fin in a field effect transistor, comprising: stepforming fins and first spacing regions, there are two types of fins—the first type is configured to be cut off and a second type is configured to be reserved; and forming a first material layer to fill the first spacing regions; stepforming a first pattern structure comprising first strip structures aligning to one first type fin and second spacing regions; stepforming second sidewalls on two sides of each first strip structure; stepremoving the first strip structures to form a second pattern structure by the second sidewalls; stepetching away the first material layer and the first type of fins by using the second sidewalls as a mask ; stepremoving the second sidewalls and the remaining first material layer. The present application enables using less advanced lithography equipment.