The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
May. 13, 2024
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Abstract
The present disclosure provides a method of reducing damage to floating gate polysilicon during etching. The method includes: forming a floating gate thicker than 400 Å on a tunneling oxide layer, forming a first region including a portion of the floating gate from the bottom to the 400 Å thickness, and forming a second region including a portion of the floating gate above the 400 Å thickness; performing carbon-doping deposition into the first region of the floating gate, wherein a carbon doping process is arranged to be in gradually decreasing flow rate in a direction from the bottom of the floating gate up to the 400 Å thickness, and the second region is not subjected to carbon doping; forming a stack layer including silicon oxide, silicon nitride, and silicon oxide on the floating gate; and forming a control gate on the stack layer.