Shanghai, China

Zhi Tian

USPTO Granted Patents = 18 

Average Co-Inventor Count = 2.8

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2014-2025

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18 patents (USPTO):Explore Patents

Title: Zhi Tian: Innovator in High Voltage Devices

Introduction

Zhi Tian is a prominent inventor based in Shanghai, China, known for his significant contributions to the field of high voltage devices. With a total of 17 patents to his name, he has made remarkable advancements in semiconductor technology.

Latest Patents

Among his latest patents is an HV device and method for manufacturing the same. This invention discloses a high voltage device that includes a gate dielectric layer formed in a first trench, a gate conductive material layer on the surface of the gate dielectric layer, and a second dielectric layer filling a second trench. The design ensures that the depths of both trenches are equal, connecting to form an overall trench. Additionally, he has developed a low voltage triggering silicon controlled rectifier, which features a PN junction formed by an N well and a P well, along with various regions that enhance its functionality.

Career Highlights

Zhi Tian has worked with notable companies such as Shanghai Huali Microelectronics Corporation and Shanghai Huali Integrated Circuit Corporation. His experience in these organizations has allowed him to refine his skills and contribute to innovative projects in the semiconductor industry.

Collaborations

Zhi has collaborated with talented individuals in his field, including Haoyu Chen and Hua Shao. Their teamwork has fostered an environment of creativity and innovation.

Conclusion

Zhi Tian's work in high voltage devices and semiconductor technology showcases his expertise and dedication to innovation. His contributions continue to impact the industry positively.

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