The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Jun. 29, 2023
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Abstract
The present application discloses an HV device, comprising: a gate dielectric layer formed in a first trench, a gate conductive material layer formed on the surface of the gate dielectric layer, and a second dielectric layer filling a second trench formed between a second side face of a drain shallow trench isolation and a first side face of the first trench. The depths of the first trench and the second trench are equal. The first trench and the second trench connect with each other to form an overall trench. Bottom surfaces of the second dielectric layer and the gate dielectric layer are flush with each other. A first side face of the gate conductive material layer extends to the surface of the second dielectric layer. The present application also discloses a method for manufacturing the HV device.