The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2026
Filed:
Aug. 20, 2024
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Qiwei Wang, Shanghai, CN;
Zhen Gu, Shanghai, CN;
Haoyu Chen, Shanghai, CN;
Lei Zhang, Shanghai, CN;
Zhi Tian, Shanghai, CN;
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Abstract
This application discloses a CIS pixel readout circuit structure. An SG and an SF adopt different transverse thicknesses of spacers. The spacer of the SG adopts a smaller transverse thickness to reduce the parasitic resistance. The spacer of the SF adopts a larger transverse thickness to reduce the GIDL current. In the CIS pixel readout circuit structure according to this application, drain metal plugs are formed on outer sides of both left and right ends of an SF gate structure. The SF and the SG form a T-shaped combined compact structure to achieve equivalent parallel connection of two SF, thus effectively reducing the parasitic resistance of the share active area between the SG and the SF, and simultaneously saving the space area. This application further discloses a method for fabricating a CIS pixel readout circuit structure.